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IXFN66N85XN-Channel 850 V 65A (Tc) 830W (Tc) Chassis Mount SOT-227B

1:$35.5210

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFN66-906804
ManufacturerLittelfuse®
MPN #.IXFN66N85X
Estimated Lead Time32 Weeks
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DatasheetDatasheetIXFN66N85X(PDF)
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In Stock: 317
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 9, 2024
* Quantity
Unit Price$ 35.5210
Ext. Price$ 35.5210
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$35.5210$35.5210
10$31.6480$316.4800
100$27.7790$2777.9000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFN66
Continuous Drain Current (ID) @ 25°C65A (Tc)
Drain-to-Source Voltage (VDS)850 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)230 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8900 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 33A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 8mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFN66N85X
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)