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IXTY1R4N100PN-Channel 1000 V 1.4A (Tc) 63W (Tc) Surface Mount TO-252AA

1:$1.6390

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTY1R-999402
ManufacturerLittelfuse®
MPN #.IXTY1R4N100P
Estimated Lead Time57 Weeks
SampleGet Free Sample
DatasheetDatasheetBuilding, Home Automation Appl Guide(PDF)
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In Stock: 52
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.6390
Ext. Price$ 1.6390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
350$1.6390$573.8030
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTY1
Continuous Drain Current (ID) @ 25°C1.4A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance11Ohm @ 500mA, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Building, Home Automation Appl GuideIXT(A,P,Y)1R4N100P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTY1R4N100P is an N-Channel MOSFET manufactured by Littelfuse®. It is designed to handle a drain-source voltage of 1000V and a continuous drain current of 1.4A under specified conditions. The device offers a power dissipation capability of up to 63W when mounted on a suitable heat sink. It features a gate threshold voltage of 4.5V at a gate current of 50µA and is housed in a TO-252AA surface-mount package, which facilitates efficient thermal management and compact design. This MOSFET is suitable for high-voltage switching applications, leveraging its metal oxide semiconductor technology to provide reliable performance.
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