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IXTX400N15X4N-Channel 150 V 400A (Tc) 1500W (Tc) Through Hole PLUS247™-3

1:$25.5000

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTX40-1025315
ManufacturerLittelfuse®
MPN #.IXTX400N15X4
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT9K,X)400N15X4(PDF)
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In Stock: 655
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 25.5000
Ext. Price$ 25.5000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$25.5000$25.5000
30$25.0850$752.5370
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUltra X4
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTX400
Continuous Drain Current (ID) @ 25°C400A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)430 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1500W (Tc)
RDS(on) Drain-to-Source On Resistance3.1mOhm @ 100A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1mA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT9K,X)400N15X4
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Littelfuse® IXTX400N15X4 is an N-Channel MOSFET designed for high power applications, featuring a maximum voltage rating of 150 V and a current handling capability of 400 A at case temperature (Tc). It is housed in a PLUS247™-3 package, which supports through-hole mounting for robust physical connectivity. The device can dissipate up to 1500 W at case temperature, indicating its suitability for significant power management. This MOSFET requires a low gate drive voltage of 4.5 volts at 1 mA and exhibits a total gate charge of 430 nanocoulombs at 10 volts, offering efficient switching performance. It has a gate-source voltage tolerance of ±20 volts, enhancing its durability against voltage spikes.
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