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IXTX120P20TP-Channel 200 V 120A (Tc) Through Hole PLUS247™-3

1:$25.7310

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTX12-982329
ManufacturerLittelfuse®
MPN #.IXTX120P20T
Estimated Lead Time24 Weeks
SampleGet Free Sample
DatasheetDatasheetIXTx120P20T(PDF)
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In Stock: 125
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 25.7310
Ext. Price$ 25.7310
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$25.7310$25.7310
30$21.3290$639.8590
120$19.9960$2399.5500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTX120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)200 V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)740 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)73000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance30mOhm @ 60A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXTx120P20T
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTX120P20T is a robust P-Channel MOSFET manufactured by Littelfuse®. It is designed to handle high-power applications with a voltage rating of 200 V and a current capacity of 120A when mounted on a proper heat sink. This device is housed in a PLUS247™-3 through-hole package, offering ease of mounting and effective heat dissipation. The MOSFET features a low on-resistance of 30 milliohms at 60A and 10V, ensuring efficient performance by minimizing conduction losses. Additionally, it has a gate threshold voltage of 4.5V at 250µA, which allows for consistent operation in power management systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.