IXTT50P10P-Channel 100 V 50A (Tc) 300W (Tc) Surface Mount TO-268AA
1:$7.9280
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ABRmicro #.ABR2045-IXTT50-1006041
ManufacturerLittelfuse®
MPN #.IXTT50P10
Estimated Lead Time40 Weeks
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Datasheet
IXT(H,T)50P10(PDF)
IXT(H,T)50P10(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.9280
Ext. Price$ 7.9280
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$7.9280$2378.5130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT50
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4350 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance55mOhm @ 25A, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT50P10 is a P-channel power MOSFET manufactured by Littelfuse®. It is designed for high efficiency and performance, featuring a voltage rating of 100V and a current rating of 50A when attached to a suitable heat sink (Tc). The device is capable of handling up to 300W of power dissipation under similar thermal conditions. Encased in a TO-268AA surface-mount package, it exhibits a low on-resistance of 55 milliohms at 25A and 10V gate-source voltage, with a maximum gate-source voltage tolerance of ±20V. This combination of features makes it suitable for demanding applications that require high power handling and efficient switching.
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