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IXTT4N150HVN-Channel 1500 V 4A (Tc) 280W (Tc) Surface Mount TO-268AA

1:$32.7490

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTT4N-1032919
ManufacturerLittelfuse®
MPN #.IXTT4N150HV
Estimated Lead Time57 Weeks
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DatasheetDatasheetIXT(A,T)4N150HV(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 32.7490
Ext. Price$ 32.7490
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$32.7490$32.7490
30$27.1500$814.5020
120$25.4530$3054.3900
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT4
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)1500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1576 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation280W (Tc)
RDS(on) Drain-to-Source On Resistance6Ohm @ 500mA, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(A,T)4N150HV
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult Dev MSL3 Pkg Chg 9/Jun/2020
PCN Packaging
Multiple Devices MSL 09/Jun/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT4N150HV is a semiconductor component manufactured by Littelfuse®, featuring an N-Channel MOSFET design. It is capable of handling a maximum voltage of 1500 V and supports a continuous drain current of up to 4A when mounted on a suitable heat sink. This device is encapsulated in a surface mount TO-268AA package, allowing it to manage power dissipation up to 280W under specified conditions. The gate-source threshold voltage is set at 5V with a leakage current of 250µA. Additionally, it has an input capacitance of 1576 pF when the device is biased at 25 V, and it can withstand gate-source voltages of ±30V. This MOSFET is designed for applications requiring high-voltage switching and efficient thermal management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.