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IXTT360N055T2N-Channel 55 V 360A (Tc) 935W (Tc) Surface Mount TO-268AA
1:$9.9840
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTT36-1014186
ManufacturerLittelfuse®
MPN #.IXTT360N055T2
Estimated Lead Time27 Weeks
SampleGet Free Sample
DatasheetIXT(H,T)360N055T2(PDF)
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In Stock: 602
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 9.9840
Ext. Price$ 9.9840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.9840$9.9840
30$8.0870$242.6010
120$7.6110$913.2830
510$6.8970$3517.3110
1020$6.3260$6452.6480
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchT2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT360
Continuous Drain Current (ID) @ 25°C360A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)330 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)20000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation935W (Tc)
RDS(on) Drain-to-Source On Resistance2.4mOhm @ 100A, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT360N055T2 is a robust N-channel MOSFET manufactured by Littelfuse®. It is designed for high power applications, featuring a maximum drain-source voltage (V_DS) of 55 volts and a continuous drain current (I_D) of 360 amperes when mounted on a suitable heatsink, allowing it to manage a substantial thermal power dissipation of up to 935 watts. This surface-mount device is encapsulated in a TO-268AA package, making it suitable for compact PCB layouts. It boasts a low on-state resistance of 2.4 milliohms when conducting 100 amperes at a gate-source voltage of 10 volts, optimizing it for efficient power switching.
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