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IXTT30N60L2N-Channel 600 V 30A (Tc) 540W (Tc) Surface Mount TO-268AA

1:$17.6780

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTT30-956216
ManufacturerLittelfuse®
MPN #.IXTT30N60L2
Estimated Lead Time46 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT(H,Q,T)30N60L2(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 17.6780
Ext. Price$ 17.6780
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$17.6780$17.6780
30$14.3140$429.4200
120$13.4730$1616.7000
510$12.2090$6226.6860
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesLinear L2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT30
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)335 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10700 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation540W (Tc)
RDS(on) Drain-to-Source On Resistance240mOhm @ 15A, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(H,Q,T)30N60L2
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT30N60L2 is a surface-mount N-Channel MOSFET manufactured by Littelfuse®, designed for high-power applications. It operates at a maximum voltage of 600 V and can handle a continuous current of up to 30 A, with a power dissipation capacity of 540 W under optimal thermal conditions. Encased in the TO-268AA package, this MOSFET features a total gate charge of 335 nC at 10 V and a threshold voltage of 4.5 V at a gate-source test current of 250µA. Additionally, it has an input capacitance of 10700 pF at 25 V, contributing to its performance efficiency in appropriate circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.