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IXTT30N50PN-Channel 500 V 30A (Tc) 460W (Tc) Surface Mount TO-268AA

1:$10.7030

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ABRmicro #.ABR2045-IXTT30-999004
ManufacturerLittelfuse®
MPN #.IXTT30N50P
Estimated Lead Time-
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In Stock: 45
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 10.7030
Ext. Price$ 10.7030
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$10.7030$3210.7690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT30
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4150 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation460W (Tc)
RDS(on) Drain-to-Source On Resistance200mOhm @ 15A, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT30N50P is a surface mount N-channel MOSFET manufactured by Littelfuse®. It has a voltage rating of 500 V and a current capacity of 30 A at case temperature (Tc). This component boasts a power dissipation rating of 460 W at Tc. Encased in a TO-268AA package, it features a gate charge of 4150 pF at 25 V and can withstand gate-to-source voltages of up to ±30 V. This design makes it suitable for various electronic applications requiring efficient and high-power handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.