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IXTT2N170D2N-Channel 1700 V 2A (Tj) 568W (Tc) Surface Mount TO-268AA

1:$25.8170

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTT2N-1009096
ManufacturerLittelfuse®
MPN #.IXTT2N170D2
Estimated Lead Time35 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT(T,H)2N170D2(PDF)
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In Stock: 61
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 25.8170
Ext. Price$ 25.8170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$25.8170$25.8170
30$21.4000$641.9940
120$20.0620$2407.4550
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDepletion
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT2
Continuous Drain Current (ID) @ 25°C2A (Tj)
Drain-to-Source Voltage (VDS)1700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))-
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3650 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation568W (Tc)
RDS(on) Drain-to-Source On Resistance6.5Ohm @ 1A, 0V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(T,H)2N170D2
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT2N170D2, manufactured by Littelfuse®, is a surface-mount N-Channel MOSFET designed for high-voltage applications. It can handle a maximum voltage of 1700 V and a continuous current up to 2A at the junction temperature. The component features a power dissipation of 568W when mounted on the case. This MOSFET exhibits an on-resistance of 6.5 Ohms at a current of 1A and a gate charge of 110 nC at 5 V. It is housed in a TO-268AA package, making it suitable for compact and efficient mounting on printed circuit boards.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.