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IXTT26N60PN-Channel 600 V 26A (Tc) 460W (Tc) Surface Mount TO-268AA
1:$6.5610
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ABRmicro #.ABR2045-IXTT26-1039103
ManufacturerLittelfuse®
MPN #.IXTT26N60P
Estimated Lead Time46 Weeks
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In Stock: 49
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 6.5610
Ext. Price$ 6.5610
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$6.5610$1968.2810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT26
Continuous Drain Current (ID) @ 25°C26A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)72 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4150 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation460W (Tc)
RDS(on) Drain-to-Source On Resistance270mOhm @ 500mA, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT26N60P is an N-Channel power MOSFET manufactured by Littelfuse. It is designed for high-voltage applications with a voltage rating of 600 V and a continuous current capacity of 26A at the case temperature (Tc). It is capable of handling a substantial power dissipation of 460W, also rated at Tc. The device features a surface mount TO-268AA package for efficient thermal management. The gate charge is specified at 72 nC when driven at 10 V, and it has a gate-to-source voltage rating of ±30V, allowing for versatile control signals.
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