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IXTT26N60PN-Channel 600 V 26A (Tc) 460W (Tc) Surface Mount TO-268AA

1:$6.5610

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ABRmicro #.ABR2045-IXTT26-1039103
ManufacturerLittelfuse®
MPN #.IXTT26N60P
Estimated Lead Time46 Weeks
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In Stock: 49
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 6.5610
Ext. Price$ 6.5610
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$6.5610$1968.2810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT26
Continuous Drain Current (ID) @ 25°C26A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)72 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4150 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation460W (Tc)
RDS(on) Drain-to-Source On Resistance270mOhm @ 500mA, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT26N60P is an N-Channel power MOSFET manufactured by Littelfuse. It is designed for high-voltage applications with a voltage rating of 600 V and a continuous current capacity of 26A at the case temperature (Tc). It is capable of handling a substantial power dissipation of 460W, also rated at Tc. The device features a surface mount TO-268AA package for efficient thermal management. The gate charge is specified at 72 nC when driven at 10 V, and it has a gate-to-source voltage rating of ±30V, allowing for versatile control signals.
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