IXTR90P20PP-Channel 200 V 53A (Tc) 312W (Tc) Through Hole ISOPLUS247™
1:$13.9110
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ABRmicro #.ABR2045-IXTR90-926364
ManufacturerLittelfuse®
MPN #.IXTR90P20P
Estimated Lead Time40 Weeks
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Datasheet
IXTR90P20P(PDF)
IXTR90P20P(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 13.9110
Ext. Price$ 13.9110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$13.9110$4173.3940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolarP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTR90
Continuous Drain Current (ID) @ 25°C53A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)205 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation312W (Tc)
RDS(on) Drain-to-Source On Resistance48mOhm @ 45A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTR90P20P is a P-Channel power MOSFET manufactured by Littelfuse®. It is designed to handle a maximum voltage of 200 V and support up to 53 A current at case temperature (Tc), with a power dissipation of 312 W under the same conditions. This MOSFET is housed in a through-hole ISOPLUS247™ package. It features a gate charge of 205 nC at 10 V, a threshold voltage of 4V at 1mA, and operates with a gate-source voltage of 10V. This component offers robust performance in high-power applications due to its significant current carrying capacity and thermal efficiency.
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