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IXTR48P20PP-Channel 200 V 30A (Tc) 190W (Tc) Through Hole ISOPLUS247™

1:$11.0080

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTR48-1007830
ManufacturerLittelfuse®
MPN #.IXTR48P20P
Estimated Lead Time40 Weeks
SampleGet Free Sample
DatasheetDatasheetIXTR48P20P(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 11.0080
Ext. Price$ 11.0080
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$11.0080$330.2250
90$10.3600$932.4390
300$10.0360$3010.9130
750$9.3890$7041.9840
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolarP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTR48
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)103 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5400 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance93mOhm @ 24A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXTR48P20P
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTR48P20P, manufactured by Littelfuse®, is a P-Channel MOSFET designed with a 200V drain-source breakdown voltage and can handle a continuous current of 30A at an optimal case temperature (Tc). It features a 190W power dissipation capacity under similar conditions and comes in an ISOPLUS247™ through-hole package for convenient mounting. This MOSFET displays an on-state resistance of 93 mOhm at a current of 24A with a gate-source voltage of 10V. Additionally, it has a gate charge of 103 nC at a gate-source voltage of 10V, ensuring efficient switching performance. The device can operate with gate-source voltages up to ±20V, making it suitable for various demanding electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.