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IXTQ82N25PN-Channel 250 V 82A (Tc) 500W (Tc) Through Hole TO-3P

1:$7.7460

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ABRmicro #.ABR2045-IXTQ82-962450
ManufacturerLittelfuse®
MPN #.IXTQ82N25P
Estimated Lead Time40 Weeks
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.7460
Ext. Price$ 7.7460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.7460$7.7460
30$6.1800$185.3850
120$5.5290$663.5100
510$4.8790$2488.2900
1020$4.3910$4479.1390
2010$4.1140$8269.1400
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTQ82
Continuous Drain Current (ID) @ 25°C82A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)142 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4800 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 41A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTQ82N25P is a high-power N-Channel MOSFET manufactured by Littelfuse®. It is designed to handle a maximum voltage of 250 V and a current of 82A under specific thermal conditions (Tc). This component supports a power dissipation of up to 500W at its case temperature (Tc). Encased in a TO-3P through-hole package, it is suitable for applications requiring robust performance. The gate-source voltage rating is 10V, and it features an input capacitance of 4800 pF at 25 V, indicating its capability to manage rapid changes in voltage efficiently.
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