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IXTQ82N25PN-Channel 250 V 82A (Tc) 500W (Tc) Through Hole TO-3P
1:$7.7460
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ABRmicro #.ABR2045-IXTQ82-962450
ManufacturerLittelfuse®
MPN #.IXTQ82N25P
Estimated Lead Time40 Weeks
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.7460
Ext. Price$ 7.7460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.7460$7.7460
30$6.1800$185.3850
120$5.5290$663.5100
510$4.8790$2488.2900
1020$4.3910$4479.1390
2010$4.1140$8269.1400
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTQ82
Continuous Drain Current (ID) @ 25°C82A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)142 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4800 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 41A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTQ82N25P is a high-power N-Channel MOSFET manufactured by Littelfuse®. It is designed to handle a maximum voltage of 250 V and a current of 82A under specific thermal conditions (Tc). This component supports a power dissipation of up to 500W at its case temperature (Tc). Encased in a TO-3P through-hole package, it is suitable for applications requiring robust performance. The gate-source voltage rating is 10V, and it features an input capacitance of 4800 pF at 25 V, indicating its capability to manage rapid changes in voltage efficiently.
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