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IXTQ36N30PN-Channel 300 V 36A (Tc) 300W (Tc) Through Hole TO-3P

1:$2.9670

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ABRmicro #.ABR2045-IXTQ36-944272
ManufacturerLittelfuse®
MPN #.IXTQ36N30P
Estimated Lead Time40 Weeks
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In Stock: 209
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.9670
Ext. Price$ 2.9670
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.9670$2.9670
30$2.3510$70.5390
120$2.0160$241.8680
510$1.9710$1005.1780
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolarHT™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTQ36
Continuous Drain Current (ID) @ 25°C36A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2250 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 18A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Littelfuse® IXTQ36N30P is a high-power N-Channel MOSFET characterized by its ability to handle a maximum voltage of 300 V and a current of 36A when mounted to a suitable heatsink at a case temperature (Tc). It is designed to dissipate up to 300W of power under optimal thermal conditions. Packaged in a robust TO-3P through-hole configuration, it ensures reliable thermal and electrical performance. The device features a gate threshold voltage of 5.5V at 250µA and operates at 10V for efficient switching, making it suitable for high-efficiency power management tasks in circuits requiring robust high-voltage handling.
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