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IXTQ30N50L2N-Channel 500 V 30A (Tc) 400W (Tc) Through Hole TO-3P

1:$9.7630

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ABRmicro #.ABR2045-IXTQ30-953153
ManufacturerLittelfuse®
MPN #.IXTQ30N50L2
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT(H,Q,T)30N50L2(PDF)
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In Stock: 139
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 9.7630
Ext. Price$ 9.7630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$9.7630$2928.9940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesLinear L2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTQ30
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)240 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8100 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation400W (Tc)
RDS(on) Drain-to-Source On Resistance200mOhm @ 15A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(H,Q,T)30N50L2
Environmental Information
Ixys IC REACH
PCN Design/Specification
Multiple Devices Material 23/Jun/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTQ30N50L2 is a robust N-Channel MOSFET manufactured by Littelfuse®. It is designed to handle a maximum voltage of 500 V and a continuous current of 30A under certain conditions, with a power dissipation capability of 400W. Packaged in a TO-3P through-hole format, this MOSFET features an on-resistance of 200 milliohms at a drive current of 15A and a gate-source voltage of 10V. The device demands a gate threshold voltage of 4.5V at a leakage current of 250µA, making it suited for high-efficiency switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.