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IXTQ160N10TN-Channel 100 V 160A (Tc) 430W (Tc) Through Hole TO-3P

1:$3.3870

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTQ16-948731
ManufacturerLittelfuse®
MPN #.IXTQ160N10T
Estimated Lead Time27 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT(H,Q)160N10T(PDF)
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In Stock: 96
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.3870
Ext. Price$ 3.3870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$3.3870$1016.1750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrench
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTQ160
Continuous Drain Current (ID) @ 25°C160A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)132 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6600 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation430W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 25A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(H,Q)160N10T
Environmental Information
Ixys IC REACH
PCN Design/Specification
Multiple Devices Material 23/Jun/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTQ160N10T is an N-channel MOSFET manufactured by Littelfuse®. It is designed for high-power applications, featuring a maximum drain-source voltage of 100V and a continuous drain current of 160A at case temperature. The device exhibits a low on-resistance of 7 milliohms when operating at 25A with a gate-source voltage of 10V, ensuring efficient performance. It supports a power dissipation of up to 430W at case temperature. Packaged in a TO-3P through-hole configuration, the MOSFET allows for robust and reliable integration into various electronic systems, making it suitable for high-current, high-voltage environments.
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