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IXTP80N075L2N-Channel 75 V 80A (Tc) 357W (Tc) Through Hole TO-220-3

1:$6.3600

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTP80-1036379
ManufacturerLittelfuse®
MPN #.IXTP80N075L2
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT(A,P,H)80N075L2(PDF)
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In Stock: 28
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 6.3600
Ext. Price$ 6.3600
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.3600$6.3600
50$5.0810$254.0440
100$4.5450$454.5380
500$4.0110$2005.4690
1000$3.6100$3610.3750
2000$3.3820$6763.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesLinear L2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP80
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)103 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3600 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation357W (Tc)
RDS(on) Drain-to-Source On Resistance24mOhm @ 40A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(A,P,H)80N075L2
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP80N075L2 is a power MOSFET manufactured by Littelfuse®. It features an N-channel configuration suitable for handling high current and voltage levels up to 80A and 75V, respectively. Encased in a TO-220-3 package, this MOSFET supports through-hole mounting, making it appropriate for use in robust thermal handling applications. The device demonstrates a power dissipation capacity of 357W at a case temperature (Tc) and requires a gate threshold voltage of 4.5V for operation, carrying a gate charge of 103 nC at 10V. These specifications make it an efficient component for power management tasks, providing reliable switching performance with low drive power requirements.
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