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IXTP50N20PN-Channel 200 V 50A (Tc) 360W (Tc) Through Hole TO-220-3
1:$4.2570
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTP50-1020057
ManufacturerLittelfuse®
MPN #.IXTP50N20P
Estimated Lead Time44 Weeks
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In Stock: 251
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.2570
Ext. Price$ 4.2570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.2570$4.2570
50$3.3750$168.7250
100$2.8920$289.2130
500$2.5710$1285.6250
1000$2.2020$2201.5000
2000$2.0730$4145.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP50
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2720 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 50A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP50N20P is an N-Channel MOSFET manufactured by Littelfuse, designed for high-power applications with a voltage rating of 200 V and a current handling capability of 50A when properly mounted to a heatsink. It comes in a through-hole TO-220-3 package, which allows for easy integration into various circuit boards. This MOSFET offers a low on-resistance of 60 milliohms at a gate-source voltage of 10V and a drain current of 50A, ensuring efficient performance. Additionally, it features a gate threshold voltage of 5V at a drain-source current of 250µA and a typical input capacitance of 2720 pF at 25V, supporting rapid switching actions in electronic circuits. Its power dissipation capability is rated at 360W when mounted correctly, making it suitable for high-energy applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.