ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
IXTP3N120N-Channel 1200 V 3A (Tc) 200W (Tc) Through Hole TO-220-3

1:$6.9410

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTP3N-997518
ManufacturerLittelfuse®
MPN #.IXTP3N120
Estimated Lead Time57 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT(A,P)3N120(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 385
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.9410
Ext. Price$ 6.9410
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.9410$6.9410
50$5.5440$277.2060
100$4.9610$496.0810
500$4.3760$2188.2190
1000$3.9390$3938.6880
2000$3.6920$7384.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
IXFN66N85X$37.7410
Littelfuse®
N-Channel 850 V 65A (Tc) 830W (Tc) Chassis Mount SOT-227B
IXFR180N15P$11.5160
Littelfuse®
N-Channel 150 V 100A (Tc) 300W (Tc) Through Hole ISOPLUS247™
IXFT150N25X3HV$22.3280
Littelfuse®
N-Channel 250 V 150A (Tc) 780W (Tc) Surface Mount TO-268HV (IXFT)
IXTA05N100$2.6220
Littelfuse®
N-Channel 1000 V 750mA (Tc) 40W (Tc) Surface Mount TO-263AA
IXTA08N120P$3.4110
Littelfuse®
N-Channel 1200 V 800mA (Tc) 50W (Tc) Surface Mount TO-263AA
IXTH10N100D$13.7020
Littelfuse®
N-Channel 1000 V 10A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
IXTP3N100P$3.8460
Littelfuse®
N-Channel 1000 V 3A (Tc) 125W (Tc) Through Hole TO-220-3
Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP3
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1350 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance4.5Ohm @ 500mA, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(A,P)3N120
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP3N120 is a semiconductor device manufactured by Littelfuse®, designed as an N-channel MOSFET. It is capable of withstanding a maximum voltage of 1200 volts and supports a continuous current of 3 amperes at a case temperature, with a power dissipation capacity of 200 watts. The device is constructed in a TO-220-3 through-hole package, featuring a drain-source on-resistance of 4.5 ohms at 500 mA, 10V. It has a total gate charge of 42 nanocoulombs when driven at 10 volts, and it can handle gate-source voltages of up to ±20 volts.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.