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IXTP14N60PMN-Channel 600 V 7A (Tc) 75W (Tc) Through Hole TO-220 Isolated Tab

1:$2.3390

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ABRmicro #.ABR2045-IXTP14-1006766
ManufacturerLittelfuse®
MPN #.IXTP14N60PM
Estimated Lead Time46 Weeks
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In Stock: 140
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3390
Ext. Price$ 2.3390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$2.3390$701.5690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP14
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance550mOhm @ 7A, 10V
Package Type (Mfr.)TO-220 Isolated Tab
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-220-3 Full Pack, Isolated Tab
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP14N60PM is a semiconductor component manufactured by Littelfuse, designed as an N-Channel MOSFET with a voltage rating of 600V and a continuous current rating of 7A at a case temperature. It is housed in a TO-220 package with an isolated tab, which facilitates through-hole mounting. The device features a typical on-resistance of 550 milliohms at a drain current of 7A and a gate-source voltage of 10V. Additionally, it has a total gate charge of 36 nanocoulombs at 10V and can handle gate-source voltages up to ±30V. The MOSFET supports power dissipation up to 75 watts, making it suitable for a wide range of electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.