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IXTP14N60PMN-Channel 600 V 7A (Tc) 75W (Tc) Through Hole TO-220 Isolated Tab
1:$2.3390
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTP14-1006766
ManufacturerLittelfuse®
MPN #.IXTP14N60PM
Estimated Lead Time46 Weeks
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In Stock: 140
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3390
Ext. Price$ 2.3390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$2.3390$701.5690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP14
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance550mOhm @ 7A, 10V
Package Type (Mfr.)TO-220 Isolated Tab
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-220-3 Full Pack, Isolated Tab
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP14N60PM is a semiconductor component manufactured by Littelfuse, designed as an N-Channel MOSFET with a voltage rating of 600V and a continuous current rating of 7A at a case temperature. It is housed in a TO-220 package with an isolated tab, which facilitates through-hole mounting. The device features a typical on-resistance of 550 milliohms at a drain current of 7A and a gate-source voltage of 10V. Additionally, it has a total gate charge of 36 nanocoulombs at 10V and can handle gate-source voltages up to ±30V. The MOSFET supports power dissipation up to 75 watts, making it suitable for a wide range of electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.