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IXTP12N65X2N-Channel 650 V 12A (Tc) 180W (Tc) Through Hole TO-220

1:$2.0550

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ABRmicro #.ABR2045-IXTP12-984973
ManufacturerLittelfuse®
MPN #.IXTP12N65X2
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetBuilding, Home Automation Appl Guide(PDF)
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In Stock: 47
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0550
Ext. Price$ 2.0550
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$2.0550$616.4630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUltra X2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP12
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1100 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance300mOhm @ 6A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Building, Home Automation Appl GuideIXTx12N65X2
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP12N65X2 is a robust N-Channel MOSFET manufactured by Littelfuse®, designed to handle high-voltage applications with a rating of 650 V and a continuous current capacity of 12A at Tc. It features a low on-resistance of 300mOhm when operating at 6A and 10V, which helps minimize power loss and improve efficiency. This transistor is housed in a TO-220 through-hole package, supporting a maximum power dissipation of 180W at Tc. With a gate threshold voltage of 5V at a gate current of 250µA and a gate-to-source voltage rating of ±30V, it ensures reliable performance in demanding conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.