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IXTP10N60PN-Channel 600 V 10A (Tc) 200W (Tc) Through Hole TO-220-3

1:$2.0980

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTP10-952380
ManufacturerLittelfuse®
MPN #.IXTP10N60P
Estimated Lead Time46 Weeks
SampleGet Free Sample
DatasheetDatasheetBuilding, Home Automation Appl Guide(PDF)
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In Stock: 33
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0980
Ext. Price$ 2.0980
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$2.0980$629.5310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP10
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1610 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance740mOhm @ 5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Building, Home Automation Appl GuideIXT(A,P) 10N60P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP10N60P is an N-Channel MOSFET manufactured by Littelfuse®. It is designed to handle a maximum voltage of 600 V and a current of 10 A when mounted on a suitable heat sink, with a maximum power dissipation of 200 W. The component is housed in a TO-220-3 package, making it suitable for through-hole mounting on circuit boards. Key electrical characteristics include an input capacitance of 1610 pF at 25 V and a gate threshold voltage of 5.5 V with a gate current of 250 µA. These specifications make the IXTP10N60P a robust choice for diverse electronic applications requiring high voltage and current handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.