IXTP08N120PN-Channel 1200 V 800mA (Tc) 50W (Tc) Through Hole TO-220-3
1:$2.1860
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ABRmicro #.ABR2045-IXTP08-993234
ManufacturerLittelfuse®
MPN #.IXTP08N120P
Estimated Lead Time57 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.1860
Ext. Price$ 2.1860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$2.1860$655.6690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP08
Continuous Drain Current (ID) @ 25°C800mA (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)333 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance25Ohm @ 500mA, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-220-3
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP08N120P, manufactured by Littelfuse®, is an N-Channel MOSFET designed for high-voltage applications with a maximum voltage rating of 1200 V and a continuous drain current of 800 mA when operating at a case temperature (Tc). It features a power dissipation capacity of 50W under the same conditions. Housed in a TO-220-3 package, this component is suitable for through-hole mounting. It has a gate-source voltage rating of 10V, with a tolerance of ±20V, and exhibits a typical input capacitance of 333 pF at 25 V.
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