IXTN40P50PP-Channel 500 V 40A (Tc) 890W (Tc) Chassis Mount SOT-227B
1:$32.2530
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ABRmicro #.ABR2045-IXTN40-938680
ManufacturerLittelfuse®
MPN #.IXTN40P50P
Estimated Lead Time57 Weeks
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Datasheet
IXTN40P50P(PDF)
IXTN40P50P(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 32.2530
Ext. Price$ 32.2530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$32.2530$32.2530
10$28.6600$286.5990
100$25.0680$2506.7560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolarP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTN40
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)205 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation890W (Tc)
RDS(on) Drain-to-Source On Resistance230mOhm @ 500mA, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSOT-227-4, miniBLOC
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTN40P50P is a P-Channel MOSFET manufactured by Littelfuse®, featuring a high voltage rating of 500 V and a current capacity of 40 A at the case temperature (Tc). It offers a power dissipation capability of 890 W at Tc and comes in a robust SOT-227B chassis mount package. With an on-resistance of 230mOhm at 500mA and 10V, this MOSFET is designed to efficiently handle substantial power levels. Additionally, it has an input capacitance of 11500 pF when measured at 25 V, indicating its capability to manage high-frequency switching applications.
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