IXTN32P60PP-Channel 600 V 32A (Tc) 890W (Tc) Chassis Mount SOT-227B
1:$22.6710
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ABRmicro #.ABR2045-IXTN32-983267
ManufacturerLittelfuse®
MPN #.IXTN32P60P
Estimated Lead Time46 Weeks
SampleGet Free Sample
Datasheet
IXTN32P60P(PDF)
IXTN32P60P(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 22.6710
Ext. Price$ 22.6710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$22.6710$22.6710
10$20.6830$206.8260
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolarP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTN32
Continuous Drain Current (ID) @ 25°C32A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)196 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11100 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation890W (Tc)
RDS(on) Drain-to-Source On Resistance350mOhm @ 500mA, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSOT-227-4, miniBLOC
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTN32P60P is a semiconductor component manufactured by Littelfuse®, featuring a P-Channel MOSFET configuration. It is designed for high-power applications with a voltage rating of 600 V and a current capacity of 32A at the case temperature (Tc). The device supports a power dissipation of up to 890W, also at Tc, and is housed in a SOT-227B package suitable for chassis mounting. The MOSFET operates with a gate-source voltage of 10V and has a capacitance of 11100 pF at 25 V, making it suitable for tasks requiring robust voltage and current handling capabilities.
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