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IXTN210P10TP-Channel 100 V 210A (Tc) 830W (Tc) Chassis Mount SOT-227B

1:$42.9630

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTN21-995439
ManufacturerLittelfuse®
MPN #.IXTN210P10T
Estimated Lead Time40 Weeks
SampleGet Free Sample
DatasheetDatasheetIXTN210P10T(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 42.9630
Ext. Price$ 42.9630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$42.9630$42.9630
10$38.2810$382.8080
100$33.6010$3360.0500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTN210
Continuous Drain Current (ID) @ 25°C210A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)740 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)69500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 105A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXTN210P10T
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTN210P10T from Littelfuse® is a P-Channel power MOSFET designed for high power applications. It features a maximum voltage of 100V and can handle a continuous current of 210A at the case temperature. The device is capable of dissipating up to 830W, making it suitable for demanding environments. Packaged in a SOT-227B chassis mount, it operates effectively with gate-source voltages up to ±15V. The MOSFET presents a gate charge of 740 nC when driven at 10V, which influences its switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.