IXTN170P10PP-Channel 100 V 170A (Tc) 890W (Tc) Chassis Mount SOT-227B
1:$32.2530
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ABRmicro #.ABR2045-IXTN17-1006947
ManufacturerLittelfuse®
MPN #.IXTN170P10P
Estimated Lead Time40 Weeks
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Datasheet
IXTN170P10P(PDF)
IXTN170P10P(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 32.2530
Ext. Price$ 32.2530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$32.2530$32.2530
10$28.6600$286.5990
100$25.0680$2506.7560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTN170
Continuous Drain Current (ID) @ 25°C170A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)240 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12600 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation890W (Tc)
RDS(on) Drain-to-Source On Resistance12mOhm @ 500mA, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSOT-227-4, miniBLOC
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTN170P10P is a P-channel MOSFET manufactured by Littelfuse, featuring a 100V maximum drain-source voltage and a continuous drain current of 170A at the case temperature (Tc). It is designed for high-power applications with a power dissipation capacity of 890W at Tc. The device is encapsulated in a SOT-227B chassis mount package, offering robust performance characteristics. It has a gate threshold voltage of 4V at 1mA and an input capacitance of 12600 pF at 25V, contributing to its efficiency in switching operations.
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