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IXTK82N25PN-Channel 250 V 82A (Tc) 500W (Tc) Through Hole TO-264 (IXTK)

1:$9.6250

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTK82-930513
ManufacturerLittelfuse®
MPN #.IXTK82N25P
Estimated Lead Time40 Weeks
SampleGet Free Sample
DatasheetDatasheetBuilding, Home Automation Appl Guide(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 9.6250
Ext. Price$ 9.6250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.6250$9.6250
25$7.6840$192.1000
100$6.8750$687.5440
500$6.0660$3032.9060
1000$5.4600$5460.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTK82
Continuous Drain Current (ID) @ 25°C82A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)142 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4800 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 41A, 10V
Package Type (Mfr.)TO-264 (IXTK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Building, Home Automation Appl GuideIXT(K,Q,T)82N25P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTK82N25P, manufactured by Littelfuse®, is an N-Channel MOSFET designed for high-power applications, housed in a TO-264 through-hole package. It operates at a maximum drain-source voltage of 250 V and can conduct continuous current up to 82A when fully enhanced. This MOSFET is capable of dissipating a maximum power of 500W. It features a low on-state resistance of 35 milliohms when conducting at 41A and a gate threshold voltage of 5V at 250µA. Additionally, it has an input capacitance of 4800 pF at 25 V, indicating its capacity to manage voltage changes efficiently.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.