IXTH8P50P-Channel 500 V 8A (Tc) 180W (Tc) Through Hole TO-247 (IXTH)
1:$6.2770
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ABRmicro #.ABR2045-IXTH8P-951299
ManufacturerLittelfuse®
MPN #.IXTH8P50
Estimated Lead Time46 Weeks
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Datasheet
IXT(H,T)8P50(PDF)
IXT(H,T)8P50(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.2770
Ext. Price$ 6.2770
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$6.2770$188.3180
90$5.6160$505.4740
300$5.2860$1585.7810
750$4.9560$3716.6250
1500$4.4590$6688.9690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTH8
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3400 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance1.2Ohm @ 4A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH8P50 is a P-Channel power MOSFET manufactured by Littelfuse®, housed in a TO-247 package for through-hole mounting. It can handle a maximum drain-source voltage of 500 volts and a continuous current of 8 amperes at the case temperature (Tc). The device is capable of dissipating up to 180 watts of power when properly cooled. Its specifications include a gate threshold voltage of 5 volts at 250 microamperes and a total gate charge of 130 nanocoulombs measured at 10 volts. The IXTH8P50 can withstand gate-source voltages of ±20 volts, making it suitable for high-voltage and high-current applications.
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