The IXTH3N150 is an N-channel MOSFET manufactured by Littelfuse®, designed for high-voltage and high-power applications. It is capable of handling a drain-source voltage of 1500 volts and a continuous drain current of 3 amps under specified conditions. The device supports a maximum power dissipation of 250 watts when mounted on a proper heatsink. Housed in a TO-247 package, it allows for efficient thermal management in through-hole mounting configurations. Key electrical characteristics include a gate threshold voltage of 5 volts at a gate current of 250 microamperes, and a gate charge of 38.6 nanocoulombs at a gate-source voltage of 10 volts, making it suitable for efficient switching performance in high-energy circuits.