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IXTH24N65X2N-Channel 650 V 24A (Tc) 390W (Tc) Through Hole TO-247 (IXTH)

1:$3.7020

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ABRmicro #.ABR2045-IXTH24-931647
ManufacturerLittelfuse®
MPN #.IXTH24N65X2
Estimated Lead Time32 Weeks
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In Stock: 180
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.7020
Ext. Price$ 3.7020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.7020$3.7020
30$2.9540$88.6130
120$2.7360$328.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUltra X2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTH24
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2060 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation390W (Tc)
RDS(on) Drain-to-Source On Resistance145mOhm @ 12A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH24N65X2 is a semiconductor component manufactured by Littelfuse®, designed as an N-Channel MOSFET with a voltage rating of 650 V and a current capacity of 24A (Tc). It dissipates power up to 390W (Tc) and features a TO-247 through-hole package type, which facilitates easy mounting and heat dissipation. The component's capacitance stands at 2060 pF when measured at 25 V. It demonstrates an on-resistance of 145 milliohms at a drain current of 12A and a gate-to-source voltage of 10V. This MOSFET is thus suited for high-power applications where efficient energy handling is essential.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.