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IXTH24N65X2N-Channel 650 V 24A (Tc) 390W (Tc) Through Hole TO-247 (IXTH)
1:$3.7020
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ABRmicro #.ABR2045-IXTH24-931647
ManufacturerLittelfuse®
MPN #.IXTH24N65X2
Estimated Lead Time32 Weeks
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In Stock: 180
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.7020
Ext. Price$ 3.7020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.7020$3.7020
30$2.9540$88.6130
120$2.7360$328.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesUltra X2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTH24
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2060 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation390W (Tc)
RDS(on) Drain-to-Source On Resistance145mOhm @ 12A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH24N65X2 is a semiconductor component manufactured by Littelfuse®, designed as an N-Channel MOSFET with a voltage rating of 650 V and a current capacity of 24A (Tc). It dissipates power up to 390W (Tc) and features a TO-247 through-hole package type, which facilitates easy mounting and heat dissipation. The component's capacitance stands at 2060 pF when measured at 25 V. It demonstrates an on-resistance of 145 milliohms at a drain current of 12A and a gate-to-source voltage of 10V. This MOSFET is thus suited for high-power applications where efficient energy handling is essential.
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