IXTH200N10TN-Channel 100 V 200A (Tc) 550W (Tc) Through Hole TO-247 (IXTH)
1:$7.7460
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ABRmicro #.ABR2045-IXTH20-1001637
ManufacturerLittelfuse®
MPN #.IXTH200N10T
Estimated Lead Time27 Weeks
SampleGet Free Sample
Datasheet
IXT(H,Q)200N10T(PDF)
IXT(H,Q)200N10T(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.7460
Ext. Price$ 7.7460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.7460$7.7460
30$6.1800$185.3850
120$5.5290$663.5100
510$4.8790$2488.2900
1020$4.3910$4479.1390
2010$4.1140$8269.1400
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesTrench
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTH200
Continuous Drain Current (ID) @ 25°C200A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)152 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9400 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation550W (Tc)
RDS(on) Drain-to-Source On Resistance5.5mOhm @ 50A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH200N10T is a robust semiconductor device manufactured by Littelfuse®, designed as an N-channel MOSFET with a voltage rating of 100 V. It supports a continuous current of 200 A at a case temperature and can handle a power dissipation of up to 550 W, also at a case temperature. This component is housed in a TO-247 package, which is a through-hole type, facilitating easy installation and thermal management. It features a gate-source voltage rating of ±30 V and a gate threshold voltage of 10 V, making it suitable for various power electronic applications.
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