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IXTH1N450HVN-Channel 4500 V 1A (Tc) 520W (Tc) Through Hole TO-247HV

1:$37.5110

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTH1N-921508
ManufacturerLittelfuse®
MPN #.IXTH1N450HV
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXTT1N450HV(PDF)
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In Stock: 68
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 37.5110
Ext. Price$ 37.5110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$37.5110$37.5110
30$31.4310$942.9260
120$29.3360$3520.2750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTH1
Continuous Drain Current (ID) @ 25°C1A (Tc)
Drain-to-Source Voltage (VDS)4500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation520W (Tc)
RDS(on) Drain-to-Source On Resistance80Ohm @ 50mA, 10V
Package Type (Mfr.)TO-247HV
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6V @ 250µA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXTT1N450HV
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH1N450HV is a high-voltage N-Channel MOSFET manufactured by Littelfuse®, designed for handling up to 4500 V and 1 A when properly heat-sinked, with a power dissipation capability of 520 W in a through-hole TO-247HV package. It features a gate threshold voltage of 6 V at 250 µA and can withstand gate-source voltages up to ±20 V. Additionally, the component exhibits an input capacitance of 1700 pF at 25 V. This MOSFET is suitable for applications requiring robust voltage handling and efficient power dissipation.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.