IXTH130N10TN-Channel 100 V 130A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)
1:$4.2130
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ABRmicro #.ABR2045-IXTH13-1001042
ManufacturerLittelfuse®
MPN #.IXTH130N10T
Estimated Lead Time27 Weeks
SampleGet Free Sample
Datasheet
IXT(H,Q)130N10T(PDF)
IXT(H,Q)130N10T(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.2130
Ext. Price$ 4.2130
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$4.2130$126.3840
90$3.7700$339.2780
300$3.5480$1064.3060
750$3.3270$2495.0160
1500$2.9930$4489.5940
3000$2.8050$8415.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesTrench
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTH130
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)104 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5080 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance9.1mOhm @ 25A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH130N10T is a high-performance N-Channel MOSFET manufactured by Littelfuse®. It is designed for high-power applications, offering a maximum voltage of 100V and a current capacity of 130A at the case temperature. The device can dissipate up to 360W at the case temperature and is encased in a TO-247 package suitable for through-hole mounting. It features a maximum gate-source voltage of ±20V, a capacitance of 5080 pF at 25V, and an on-resistance of 9.1mOhm at a current of 25A and a gate voltage of 10V, making it a robust component for handling significant electrical loads.
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