IXTH12N150N-Channel 1500 V 12A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
1:$13.9860
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ABRmicro #.ABR2045-IXTH12-938064
ManufacturerLittelfuse®
MPN #.IXTH12N150
Estimated Lead Time57 Weeks
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Datasheet
IXT(T,H)12N150(PDF)
IXT(T,H)12N150(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 13.9860
Ext. Price$ 13.9860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$13.9860$13.9860
30$11.3210$339.6280
120$10.6540$1278.4430
510$9.6560$4924.5600
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTH12
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)1500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)106 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3720 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation890W (Tc)
RDS(on) Drain-to-Source On Resistance2Ohm @ 6A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH12N150 is a high-voltage N-channel power MOSFET manufactured by Littelfuse, housed in a TO-247 package suitable for through-hole mounting. It has a drain-source voltage rating of 1500 V and a continuous current rating of 12A, making it capable of handling substantial power loads. The part can dissipate up to 890W, as indicated by its power rating at the case temperature (Tc). Its gate-source threshold voltage is specified at 4.5V for a drain current of 250µA. Additionally, it features an input capacitance of 3720 pF at 25 V and a total gate charge of 106 nC at 10 V, attributes that influence its switching performance.
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