IXTA96P085TP-Channel 85 V 96A (Tc) 298W (Tc) Surface Mount TO-263AA
1:$5.3520
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ABRmicro #.ABR2045-IXTA96-977251
ManufacturerLittelfuse®
MPN #.IXTA96P085T
Estimated Lead Time44 Weeks
SampleGet Free Sample
Datasheet
IXT(A,H,P)96P085T(PDF)
IXT(A,H,P)96P085T(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.3520
Ext. Price$ 5.3520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.3520$5.3520
50$4.2740$213.7220
100$3.8250$382.5000
500$3.3750$1687.2500
1000$3.0380$3037.6880
2000$2.8450$5690.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesTrenchP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA96
Continuous Drain Current (ID) @ 25°C96A (Tc)
Drain-to-Source Voltage (VDS)85 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)180 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13100 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation298W (Tc)
RDS(on) Drain-to-Source On Resistance13mOhm @ 48A, 10V
Package Type (Mfr.)TO-263AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA96P085T is a P-channel MOSFET transistor manufactured by Littelfuse®. It features a drain-source voltage rating of 85V and can handle a continuous current of 96A under specified conditions. With a power dissipation capacity of 298W in a thermally controlled environment (Tc), this transistor is designed for use in power management and switch-mode applications. Its surface mount design, specifically in the TO-263AA package, allows efficient thermal management and integration into various electronic assemblies. It operates within gate-source voltage limits of ±15V and a typical threshold voltage of 10V.
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