IXTA52P10PP-Channel 100 V 52A (Tc) 300W (Tc) Surface Mount TO-263AA
1:$5.6590
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ABRmicro #.ABR2045-IXTA52-931944
ManufacturerLittelfuse®
MPN #.IXTA52P10P
Estimated Lead Time24 Weeks
SampleGet Free Sample
Datasheet
IXT(A,H,P,Q)52P10P(PDF)
IXT(A,H,P,Q)52P10P(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 5.6590
Ext. Price$ 5.6590
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.6590$5.6590
50$4.5180$225.8880
100$4.0430$404.2810
500$3.5670$1783.4060
1000$3.2100$3209.8130
2000$3.0080$6015.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolarP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA52
Continuous Drain Current (ID) @ 25°C52A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2845 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 52A, 10V
Package Type (Mfr.)TO-263AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA52P10P is a P-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) manufactured by Littelfuse®. It is designed for surface mount applications and comes in a TO-263AA package. This MOSFET can handle a maximum drain-source voltage of 100 V and a continuous current of 52A at the case temperature. It also features a power dissipation capability of up to 300W. The device has a gate charge of 60 nanocoulombs when driven at 10 volts, and a threshold voltage of 4.5 volts at a gate current of 250 microamperes, making it suitable for high-efficiency power management tasks.
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