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IXTA28P065TP-Channel 65 V 28A (Tc) 83W (Tc) Surface Mount TO-263AA

1:$1.4850

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTA28-956442
ManufacturerLittelfuse®
MPN #.IXTA28P065T
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXT(A,P)28P065T(PDF)
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In Stock: 94
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4850
Ext. Price$ 1.4850
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$1.4850$445.6130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA28
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)65 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)46 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2030 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance45mOhm @ 14A, 10V
Package Type (Mfr.)TO-263AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(A,P)28P065T
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA28P065T is a surface-mount P-Channel MOSFET manufactured by Littelfuse®. This component is capable of handling a voltage of up to 65 volts and a continuous current of 28 amperes under specified conditions (Tc). It offers a power dissipation capacity of 83 watts (Tc), housed in a TO-263AA package. The MOSFET exhibits a total gate charge of 46 nanocoulombs at 10 volts. It can handle a gate-source voltage up to ±15 volts and shows a threshold voltage of 4.5 volts at a gate current of 250 microamperes, making it suitable for various electronic applications within its operating parameters.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.