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IXTA16N50PN-Channel 500 V 16A (Tc) 300W (Tc) Surface Mount TO-263AA

1:$2.6000

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTA16-931436
ManufacturerLittelfuse®
MPN #.IXTA16N50P
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetBuilding, Home Automation Appl Guide(PDF)
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In Stock: 71
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.6000
Ext. Price$ 2.6000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$2.6000$779.9810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA16
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2250 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance400mOhm @ 8A, 10V
Package Type (Mfr.)TO-263AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Building, Home Automation Appl GuideIXT(A,P,Q) 16N50P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA16N50P is a power MOSFET manufactured by Littelfuse®, designed for high-efficiency operation in electrical systems. This N-Channel MOSFET can handle a maximum voltage of 500 V and a current of 16A when adequately cooled (at case temperature Tc). It is capable of dissipating up to 300W of power, making it suitable for demanding applications. The component features a surface-mount TO-263AA package, which facilitates compact and efficient assembly on printed circuit boards. Additionally, it possesses an input capacitance of 2250 pF at 25 V, and it can withstand gate-source voltages up to ±30V, showcasing its suitability for robust electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.