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IXTA150N15X4-7N-Channel 150 V 150A (Tc) 480W (Tc) Surface Mount TO-263-7 (IXTA)
1:$9.1790
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTA15-1012459
ManufacturerLittelfuse®
MPN #.IXTA150N15X4-7
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetIXTA150N15X4(-7)(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 9.1790
Ext. Price$ 9.1790
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$9.1790$458.9470
100$8.6380$863.8130
250$8.3690$2092.3280
500$7.8290$3914.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesUltra X4
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA150
Continuous Drain Current (ID) @ 25°C150A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)105 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance6.9mOhm @ 75A, 10V
Package Type (Mfr.)TO-263-7 (IXTA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA150N15X4-7 is a robust N-Channel MOSFET produced by Littelfuse®, designed for high-power applications. It operates at a maximum voltage of 150 V and can handle a continuous current of up to 150A when the case is adequately cooled. Encased in a surface-mountable TO-263-7 package, it provides efficient thermal performance with a power dissipation capacity of 480W. The MOSFET features a gate-to-source voltage tolerance of ±20V and is characterized by a typical gate charge of 105 nC at 10 V, making it suitable for situations that require fast switching and efficient power handling.
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