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IXTA150N15X4-7N-Channel 150 V 150A (Tc) 480W (Tc) Surface Mount TO-263-7 (IXTA)

1:$9.1790

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTA15-1012459
ManufacturerLittelfuse®
MPN #.IXTA150N15X4-7
Estimated Lead Time32 Weeks
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 9.1790
Ext. Price$ 9.1790
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$9.1790$458.9470
100$8.6380$863.8130
250$8.3690$2092.3280
500$7.8290$3914.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesUltra X4
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA150
Continuous Drain Current (ID) @ 25°C150A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)105 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance6.9mOhm @ 75A, 10V
Package Type (Mfr.)TO-263-7 (IXTA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA150N15X4-7 is a robust N-Channel MOSFET produced by Littelfuse®, designed for high-power applications. It operates at a maximum voltage of 150 V and can handle a continuous current of up to 150A when the case is adequately cooled. Encased in a surface-mountable TO-263-7 package, it provides efficient thermal performance with a power dissipation capacity of 480W. The MOSFET features a gate-to-source voltage tolerance of ±20V and is characterized by a typical gate charge of 105 nC at 10 V, making it suitable for situations that require fast switching and efficient power handling.
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