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IXTA140P05TP-Channel 50 V 140A (Tc) 298W (Tc) Surface Mount TO-263AA

1:$6.6420

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTA14-949857
ManufacturerLittelfuse®
MPN #.IXTA140P05T
Estimated Lead Time44 Weeks
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In Stock: 548
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.6420
Ext. Price$ 6.6420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.6420$6.6420
50$5.3000$264.9880
100$4.7420$474.1940
500$4.1840$2092.0630
1000$3.7670$3766.5630
2000$3.5290$7057.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA140
Continuous Drain Current (ID) @ 25°C140A (Tc)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)200 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation298W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 70A, 10V
Package Type (Mfr.)TO-263AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA140P05T is a P-channel MOSFET manufactured by Littelfuse®, designed for surface mount applications. It features a maximum voltage capacity of 50V and can handle continuous current up to 140A with a power dissipation of 298W, making it suitable for high power applications. The MOSFET offers a low on-resistance of 9mOhm at 70A with a gate voltage of 10V, demonstrating efficient conduction characteristics. It also supports a gate-source voltage of ±15V and exhibits a threshold voltage of 4V at a 250µA drain current. Housed in a TO-263AA package, this component is designed for efficient thermal management and ease of mounting on printed circuit boards.
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