IXTA120P065TP-Channel 65 V 120A (Tc) 298W (Tc) Surface Mount TO-263AA
1:$5.3520
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ABRmicro #.ABR2045-IXTA12-963100
ManufacturerLittelfuse®
MPN #.IXTA120P065T
Estimated Lead Time44 Weeks
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Datasheet
IXT(A,H,P)120P065T(PDF)
IXT(A,H,P)120P065T(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.3520
Ext. Price$ 5.3520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.3520$5.3520
50$4.2740$213.7220
100$3.8250$382.5000
500$3.3750$1687.2500
1000$3.0380$3037.6880
2000$2.8450$5690.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesTrenchP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTA120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)65 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)185 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13200 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation298W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 500mA, 10V
Package Type (Mfr.)TO-263AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA120P065T is a power MOSFET manufactured by Littelfuse®. It is a P-channel device with a maximum voltage rating of 65 volts and a continuous current rating of 120 amperes at case temperature (Tc). The component provides a power dissipation capability of 298 watts at Tc. It features low on-resistance of 10 milliohms at a test condition of 500 milliamps and 10 volts. The MOSFET possesses a total gate charge of 185 nanocoulombs at 10 volts, along with an input capacitance of 13,200 picofarads at 25 volts. It is housed in a surface-mount TO-263AA package.
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