IXFY36N20X3N-Channel 200 V 36A (Tc) 176W (Tc) Surface Mount TO-252AA
1:$3.8460
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFY36-1035505
ManufacturerLittelfuse®
MPN #.IXFY36N20X3
Estimated Lead Time32 Weeks
SampleGet Free Sample
Datasheet
IXFx36N20X3(PDF)
IXFx36N20X3(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 5547
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 3.8460
Ext. Price$ 3.8460
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.8460$3.8460
70$3.0520$213.6050
140$2.6150$366.0740
560$2.3250$1301.8600
1050$1.9900$2089.5660
2030$1.8740$3804.7280
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™, Ultra X3
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFY36
Continuous Drain Current (ID) @ 25°C36A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1425 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation176W (Tc)
RDS(on) Drain-to-Source On Resistance45mOhm @ 18A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 500µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFY36N20X3 is a surface-mount N-channel MOSFET manufactured by Littelfuse®, designed for efficient power switching applications. It features a maximum drain-source voltage of 200 V and can handle a continuous current of up to 36 A with a power dissipation capability of 176 W when mounted on a proper heatsink. This MOSFET is housed in a TO-252AA package and has a low on-resistance of 45 mOhm at a gate-source voltage of 10 V and a current of 18 A, which minimizes power loss. It also has a total gate charge of 21 nC at 10 V, facilitating fast switching times.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.