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IXFX66N85XN-Channel 850 V 66A (Tc) 1250W (Tc) Through Hole PLUS247™-3

1:$16.0460

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFX66-1016868
ManufacturerLittelfuse®
MPN #.IXFX66N85X
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFK66N85X, IXFX66N85X(PDF)
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In Stock: 210
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 16.0460
Ext. Price$ 16.0460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$16.0460$16.0460
30$14.6370$439.1100
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFX66
Continuous Drain Current (ID) @ 25°C66A (Tc)
Drain-to-Source Voltage (VDS)850 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)230 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8900 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1250W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 500mA, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 8mA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFK66N85X, IXFX66N85X
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFX66N85X is an N-Channel MOSFET manufactured by Littelfuse®, designed for high voltage and high current applications. It features a drain-source voltage rating of 850 V and can handle a continuous current of 66A when properly cooled. The device is capable of dissipating up to 1250 watts of power under ideal thermal conditions. Packaged in a PLUS247™-3 through-hole format, it provides a convenient and robust option for circuit integration. Key electrical characteristics include an input capacitance of 8900 pF at 25 V and a total gate charge of 230 nC at 10 V, contributing to its efficient switching capabilities.
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