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IXFX360N10TN-Channel 100 V 360A (Tc) 1250W (Tc) Through Hole PLUS247™-3

1:$11.3950

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFX36-991002
ManufacturerLittelfuse®
MPN #.IXFX360N10T
Estimated Lead Time27 Weeks
SampleGet Free Sample
DatasheetDatasheetIXF(K,X)360N10T(PDF)
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In Stock: 218
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 11.3950
Ext. Price$ 11.3950
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$11.3950$11.3950
30$9.2230$276.6750
120$8.6800$1041.5480
510$7.8660$4011.5010
1020$7.2150$7359.7460
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Trench
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFX360
Continuous Drain Current (ID) @ 25°C360A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)525 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)33000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1250W (Tc)
RDS(on) Drain-to-Source On Resistance2.9mOhm @ 100A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 3mA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(K,X)360N10T
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFX360N10T is a high-power N-Channel MOSFET manufactured by Littelfuse. It is designed to handle significant power loads, with a maximum voltage rating of 100 volts and a current capacity of 360 amperes under specified conditions. The component can dissipate up to 1250 watts of power when properly mounted, suggesting robust thermal performance. Encased in a PLUS247™-3 through-hole package, it is suitable for applications requiring efficient heat dissipation. It features a gate-source threshold voltage of 10 volts and boasts a capacitance of 33,000 pF at 25 volts, indicating its efficiency in high-frequency operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.