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IXFX140N30PN-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole PLUS247™-3

1:$18.3620

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFX14-925286
ManufacturerLittelfuse®
MPN #.IXFX140N30P
Estimated Lead Time40 Weeks
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In Stock: 84
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 18.3620
Ext. Price$ 18.3620
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$18.3620$18.3620
30$15.2200$456.6090
120$14.2680$1712.1980
510$12.1760$6209.8880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFX140
Continuous Drain Current (ID) @ 25°C140A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)185 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14800 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1040W (Tc)
RDS(on) Drain-to-Source On Resistance24mOhm @ 70A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFX140N30P is a high-power N-Channel MOSFET manufactured by Littelfuse, designed for demanding electrical environments. It operates with a drain-source voltage of 300 V and can handle a continuous current of 140A at optimal case temperature. The device features a low on-resistance of 24mOhm at 70A and 10V gate-source voltage, ensuring efficient performance with minimal power loss. It can dissipate up to 1040W of power, making it suited for high-power applications. The component is housed in a PLUS247™-3 package, providing a robust through-hole construction for stability and reliability in its mounting. Additionally, it supports a gate-source voltage rating of ±20V, offering flexibility in its control configuration.
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