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IXFX120N30P3N-Channel 300 V 120A (Tc) 1130W (Tc) Through Hole PLUS247™-3

1:$15.0630

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFX12-979740
ManufacturerLittelfuse®
MPN #.IXFX120N30P3
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFx120N30P3(PDF)
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In Stock: 125
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 15.0630
Ext. Price$ 15.0630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$15.0630$15.0630
30$12.1940$365.8290
120$11.4770$1377.2550
510$10.4010$5304.4140
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar3™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFX120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8630 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1130W (Tc)
RDS(on) Drain-to-Source On Resistance27mOhm @ 60A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 4mA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx120N30P3
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFX120N30P3 is a robust N-channel MOSFET manufactured by Littelfuse®, designed for high-power applications. It features a drain-source breakdown voltage of 300 V and a continuous drain current of 120 A at Tc. The device can handle substantial power dissipation up to 1130 W at Tc, making it suitable for demanding environments. Packaged in a PLUS247™-3 through-hole configuration, it offers efficient thermal and electrical performance. The MOSFET has a total gate charge of 150 nC at 10 V and supports a gate-source voltage range of ±20 V, ensuring reliable switching performance in high-power circuits.
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