IXFT18N100Q3N-Channel 1000 V 18A (Tc) 830W (Tc) Surface Mount TO-268AA
1:$12.8850
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ABRmicro #.ABR2045-IXFT18-939984
ManufacturerLittelfuse®
MPN #.IXFT18N100Q3
Estimated Lead Time46 Weeks
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Datasheet
IXFx18N100Q3(PDF)
IXFx18N100Q3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 12.8850
Ext. Price$ 12.8850
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$12.8850$3865.4810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™, Q3 Class
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFT18
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)90 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4890 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance660mOhm @ 9A, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 4mA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFT18N100Q3 is an N-Channel MOSFET manufactured by Littelfuse®. It is designed for high-voltage applications with a rating of 1000 volts and a continuous current capacity of 18 amperes at a case temperature (Tc). The device features a significant power dissipation capability with an 830-watt rating at Tc. It is packaged in a surface mount TO-268AA format, providing convenient handling and implementation in electronic circuits. The gate-source threshold voltage is 6.5 volts at 4mA, and the gate charge is 90 nanocoulombs at 10 volts, indicating efficient switching properties. The MOSFET also has a gate-source voltage rating of ±30 volts, offering reliability under various conditions.
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