ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
IXFR32N100PN-Channel 1000 V 18A (Tc) 320W (Tc) Through Hole ISOPLUS247™

1:$15.2080

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFR32-994302
ManufacturerLittelfuse®
MPN #.IXFR32N100P
Estimated Lead Time55 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFR32N100P(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 76
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 15.2080
Ext. Price$ 15.2080
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$15.2080$4562.2690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
IXFN66N85X$37.7410
Littelfuse®
N-Channel 850 V 65A (Tc) 830W (Tc) Chassis Mount SOT-227B
IXFR180N15P$11.5160
Littelfuse®
N-Channel 150 V 100A (Tc) 300W (Tc) Through Hole ISOPLUS247™
IXFT150N25X3HV$22.3280
Littelfuse®
N-Channel 250 V 150A (Tc) 780W (Tc) Surface Mount TO-268HV (IXFT)
IXTA05N100$2.6220
Littelfuse®
N-Channel 1000 V 750mA (Tc) 40W (Tc) Surface Mount TO-263AA
IXTA08N120P$3.4110
Littelfuse®
N-Channel 1200 V 800mA (Tc) 50W (Tc) Surface Mount TO-263AA
IXTH10N100D$13.7020
Littelfuse®
N-Channel 1000 V 10A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
IXTP3N100P$3.8460
Littelfuse®
N-Channel 1000 V 3A (Tc) 125W (Tc) Through Hole TO-220-3
Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFR32
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)225 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14200 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation320W (Tc)
RDS(on) Drain-to-Source On Resistance340mOhm @ 16A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 1mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFR32N100P
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFR32N100P is a N-Channel MOSFET manufactured by Littelfuse®, designed for high-voltage applications with a rating of 1000 V and a current capability of 18A (Tc). It features a maximum power dissipation of 320W (Tc) in a robust ISOPLUS247™ through-hole package. The MOSFET exhibits an on-resistance of 340mOhm at a current of 16A and gate voltage of 10V. It also presents a gate charge of 225 nC at 10V and a capacitance of 14200 pF at 25 V, making it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.